^s-tni-donductoi ^lpioancti, line. 20 stern ave. springfield, new jersey 07081 u.s.a. D44T series 250-300 volts 2 amp, 31.2 watts telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 high voltage npn power transistors features: ? very low collector saturation voltage ? excellent linearity ? fast switching case style to-220ab dimensions are in inches and (millimeters) ?4etsja28! ,1r^th -19014.931 ? ,110 ~. 380(9.851 -t1 t term.i- term2- term.3- .03310.841 26518731 245(622; .500i127imin r ,015(0.3s| case temperature reference point 00610 151 ~~ 001(0.0261 . .10 *? tot term 3 maximum ratings (ta = 25c) (unless otherwise specified) rating collectc -emitter voltage collector-emitter voltage emitter base voltage collector current ? continuous base current ? continuous total power dissipation @ ta = 25 c @ tc = 25c operating and storage junction temperature range symbol vceo vces vebo jo ib pd tj, tstg D44T1.2 250 300 5 2 0.5 2.1 31.2 -55 to +150 D44T3.4 300 400 5 2 0.5 2.1 31.2 -55to+150 units volts volts volts a a watts c thermal characteristics thermal resistance, junction to ambient thermal resistance, junction to case maximum lead temperature for soldering purpose: v4" from case for 5 seconds raja rffjc tl 60 , 4 260 60 4 260 c/w c/w c nj semi-conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. information furnished by nj semi-conductors is believed to be both accurate and reliable at the time of going to press. however, nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use. nj semi-conductors encourages customers to verify that datasheets are current before placing orders. quality semi-conductors
electrical characteristics (tc= 25 c) (unless otherwise specified) characteristic symbol win typ max unit off characteristics'1* collector-emitter breakdown voltage D44T1 ,2 (lc = 10 ma) D44T3.4 collector cutoff current (vce = rated vecs) emitter cutoff current (veb = 5v) bvces ices iebo 300 400 ? ? ? ? ? ? 10 10 volts ma ma second breakdown second breakdown with base forward biased fbsoa see figure 5 on characteristics'1' dc current gain (ic = 500ma, vce = 10v) D44T1 ,3 (ic = 50ma, vce = 10v) (lc = 500ma, vce = 10v) D44T2.4 ( ic = 50ma, vce = 10v) collector-emitter saturation voltage (lc = 500ma, ib = 50ma) base emitter saturation voltage (ic = 500ma, ib = 50ma) hfe vce(sat) vbe(sat) 30 40 75 40 ? ? ? ? ? 175 1.0 1.2 v v dynamic characteristics collector capacitance (vcb= 10v, f = 1 mhz) current gain ? bandwidth product (lc = 100ma, vce = 10v, ftest = 1-0 mhz)) ccb fr ? ? 25 45 ? ? pf mhz switching characteristics resistive load delay time + rise time storage time fall time lc = 500ma, ibi = \b2 = 50ma vcc = 50v, tp = 25msec td + tr ts tf ? ? ? 0.2 3.3 0.6 ? ? ms (1) pulse test: pulse width - 300^5 duty cycle < 2%. 400 .04 .06 .08 .1 .2 .4 ic - collector current - amps fig. 1 typical hfe vs. lc .04 .06 .08 .i .2 .4 .6 .8 ic - collector current - amps fig. 2 typical saturation voltage - characteristics
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